STD30NF06 datasheet(1/6 Pages) EVVOSEMI

Part #	STD30NF06

Description	60V N-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

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Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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General Description

The STD30NF06 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 60V,ID =30A

RDS(ON),23mΩ(Typ) @ VGS =10V

RDS(ON),29mΩ(Typ) @ VGS =4.5V

Advanced Trench Technology

Excellent RDS(ON) and Low Gate Charge

Lead free product is acquired

Application

Load Switch

PWM Application

Power management

Absolute Maximum Ratings(TA=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Drain Current-ContinuousNote3

TC=25℃

ID

30

A

TC=100℃

20

A

Drain Current-PulsedNote1

IDM

120

A

Avalanche EnergyNote4

EAS

72

mJ

Maximum Power Dissipation

TC=25℃

PD

55

W

Storage Temperature Range

TSTG

-55 to +150

℃

Operating Junction Temperature Range

TJ

-55 to +150

℃

Thermal Resistance

Parameter

Symbol

Min.

Typ.

Max

Unit

Thermal Resistance,Junction-to-Case

RθJC

-

2.7

℃

/W

1

Rev:2023A2

60V N-Channel Enhancement Mode Power MOSFET

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STD30NF06 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

STD30NF06 Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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