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FDN306 Datasheet(PDF) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

Part # FDN306
Description  P-Channel 1.8 V (D-S) MOSFET
PDF  5 Pages
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Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

FDN306 Datasheet(HTML) 3 Page - EVER SEMICONDUCTOR CO.,LIMITED

  FDN306 Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED FDN306 Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED FDN306 Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED FDN306 Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED FDN306 Datasheet HTML 5Page - EVER SEMICONDUCTOR CO.,LIMITED  
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Typical Characteristics
0
5
10
15
20
0
1234
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -4.5V
-2.5V
-3.0V
-2.0V
-1.8V
-1.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
5
10
15
20
-ID, DIRAIN CURRENT (A)
VGS = -1.8V
-3.5V
-2.5V
-2.0V
-3.0V
-4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
ID = -2.6A
VGS = -4.5V
0.02
0.04
0.06
0.08
0.1
0.12
123
45
-VGS, GATE TO SOURCE VOLTAGE (V)
ID = -1.3A
TA = 125
oC
TA = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
0.51
1.522.5
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55
oC
25oC
-125oC
VDS = -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS = 0V
TA = 125
oC
25
oC
-55oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Rev:2023A2
3
P-Channel 1.8 V (D-S) MOSFET
FDN306



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