MC33395TEW datasheet(8/16 Pages) FREESCALE

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Analog Integrated Circuit Device Data

Freescale Semiconductor

33395

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

TIMING DIAGRAM

Figure 4. Shoot-Through Suppression

Table 4. Dynamic Electrical Characteristics

Characteristics noted under conditions -40

°C ≤ T

A ≤ 125°C, 5.5 V ≤ VIGNP ≤ 24 V unless otherwise noted. Typical values

reflect approximate parameter mean at TA = 25°C under normal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

High-Side (GDHn) and Low-Side Drivers (GDHn) Rise Time

(25% to 75%), CISS Value = 2000 pF

(8)

tRH

–

0.35

1.5

µs

High-Side (GDHn) and Low-Side Drivers (GDHn) Fall Time

(75% to 25%), CISS Value = 2000 pF

(8)

tFH

–

0.25

1.5

µs

Shoot-Through Suppression Time Delay (33395) (8), (9)

33395

33395T

tD1, tD2

1.0

0.2

3.0

0.65

5.5

1.0

µs

Current Limit Time Delay (10)

tILIMDELAY

1.5

2.8

5.0

µs

Notes

See Figure 4, page 8.

Shoot-Through Suppression Time Delay is provided to prevent directly connected high- and low-side MOSFETs from being on

simultaneously.

10.

Current Limit Time Delay: The internal comparator places the device in the current limit mode when the comparator output goes LOW

and sets an internal logic bit. This takes a finite amount of time and is stated as the Current Limit Time Delay.

100

tRH tFH

tFL

tRL

TIME

tD2

tD1

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