1997 Feb 18

3

Philips Semiconductors

Product specification

NPN microwave power transistors

PTB32001X; PTB32003X;

PTB32005X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Up to 0.3 mm from ceramic.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

open base

−

15

V

collector-emitter voltage

40

V

emitter-base voltage

open collector

−

3.0

V

collector current (DC)

PTB32001X

−

0.25

A

PTB32003X

−

0.5

A

PTB32005X

−

0.75

A

total power dissipation

PTB32001X

−

4.2

W

PTB32003X

−

7.6

W

PTB32005X

−

8.7

W

storage temperature range

−65

+200

°C

operating junction temperature

−

200

°C

soldering temperature

t

≤ 10 s; note 1

−

235

°C

Fig.2

Power derating curve; PTB32001X.

f > 1 MHz.

handbook, halfpage

−50

6

4

2

0

0

200

MLC091

50

100

150

Ptot

(W)

Tmb (

Fig.3

Power derating curve; PTB32003X.

f > 1 MHz.

handbook, halfpage

50

200

10

0

MLC092

5

0

50

100

150

Ptot

(W)

Tmb (