1997 Feb 18

2

Philips Semiconductors

Product specification

NPN microwave power transistor

PTC4001T

FEATURES

• Diffused emitter ballasting resistors

providing excellent current sharing

and withstanding a high VSWR

• Interdigitated structure provides

high emitter efficiency

• Gold metallization realizes very

good characteristics stability and

excellent lifetime

• Multicell geometry gives good

balance of dissipated power and

low thermal resistance.

APPLICATIONS

Common collector oscillator circuits

under CW conditions in military and

professional applications up to

5 GHz.

DESCRIPTION

NPN silicon planar epitaxial

microwave transistor in a SOT440A

metal ceramic flange package with

collector connected to flange.

QUICK REFERENCE DATA

Note

1. Oscillating frequency should stabilize in this range.

MODE OF

OPERATION

f

(GHz)

(V)

(mW)

(mA)

class A (CW)

2.88 to 3; note 1

20

≥550

200

PINNING - SOT440A

PIN

DESCRIPTION

1

base

2

emitter

3

collector connected to flange

Fig.1 Simplified outline and symbol.

handbook, 4 columns

e

c

b

MAM131

3

1

2

Top view

Marking code: 440.