PUMD48 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1999 Apr 22

Philips Semiconductors

Product Speciﬁcation

NPN/PNP resistor-equipped transistors

PUMD48

THERMAL CHARACTERISTICS

Note

1. Refer to SC-88 standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient note 1

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO

collector cut-off current

IE = 0; VCB =50V

−−

100

ICEO

collector cut-off current

IB = 0; VCE =30V

−−

µA

IB = 0; VCE =30V; Tj = 150 °C

−−

µA

Transistor TR1 (NPN)

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

µA

hFE

DC current gain

IC = 5 mA; VCE =5V

−−

VCEsat

collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA

−−

150

Vi(off)

input-off voltage

IC = 100 µA; VCE =5V

−

1.2

0.8

Vi(on)

input-on voltage

IC = 2 mA; VCE = 0.3 V

1.6

−

input resistor

Ω

resistor ratio

0.8

1.2

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz −−

2.5

Transistor TR2 (PNP)

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−

180

µA

hFE

DC current gain

IC = −10 mA; VCE = −5 V

100

−−

VCEsat

collector-emitter saturation voltage IC = −5 mA; IB = −0.25 mA

−−−100

Vi(off)

input-off voltage

IC = −100 µA; VCE = −5V

−−0.6

−0.5

Vi(on)

input-on voltage

IC = −5 mA; VCE = −0.3 V

−1.1

−0.75 −

input resistor

1.54

2.2

2.86

Ω

resistor ratio

collector capacitance

IE =ie = 0; VCB = −10 V;

f = 1 MHz

−−

3pF

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