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FDV304P Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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FDV304P Datasheet(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 5 page ![]() SMD Type P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) < 65mΩ (VGS =-4.5V) ● RDS(ON) < 120mΩ (VGS =-2.5V) G D S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 12 Continuous Drain Current Ta = 25℃ -4.2 Ta = 70℃ -3.5 Pulsed Drain Current IDM -30 Power Dissipation Ta = 25℃ 1.4 Ta = 70℃ 1 Thermal Resistance.Junction- to-Ambient t ≤ 10s 90 Thermal Resistance.Junction- to-Ambient 125 Thermal Resistance.Junction- to-Case RthJC 60 Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 RthJA ID PD W V ℃ /W A ℃ 1 Rev:2023A2 SOT–23 1. GATE 2. SOURCE 3. DRAIN FDV304P |
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