Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

ƒ Pulse width ≤ 300µs; duty cycle ≤

‚ I

SD ≤ -2.3A, di/dt ≤ 100A/µs, V

DD ≤ V(BR)DSS,

TJ ≤ 150°C

2%.

Electrical Characteristics T

A = 25°C unless otherwi

„ Surface mounted on FR-4 board, t ≤ 10sec.

se noted

Parameter

Min. Typ. Max. Units

Conditions

Drain-to-Source Breakdown Voltage

-3

V(BR)DSS

0

V

VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

––– -0.015 –––

V/°C Reference to 25°C, ID = -1mA

190

GS = -10V, ID = -1.0A

250

V

ƒ

300

GS = -4.5V, ID = -0.50A

400

V

ƒ

VGS(th)

Gate Threshold Voltage

-1.0 ––– -3.0

V

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

––– 2.5 –––

S

VDS = -15V, ID = -2.3A ƒ

––– ––– -2.0

VDS = -16V, VGS = 0V

––– ––– -25

VDS = -16V, VGS = 0V, TJ = 55 °C

Gate-to-Source Forward Leakage

––– ––– -100

VGS = -12V

Gate-to-Source Reverse Leakage

––– ––– 100

VGS = 12V

Qg

Total Gate Charge

––– 9.3

25

ID = -2.3A

Qgs

Gate-to-Source Charge

––– 1.6 –––

nC

VDS = -10V

Qgd

Gate-to-Drain ("Miller") Charge

––– 3.0 –––

VGS = -10V ƒ

td(on)

Turn-On Delay Time

–––

12

40

VDD = -10V

tr

Rise Time

–––

16

40

ID = -1.0A

Turn-Off Delay Time

–––

42

90

RG = 6.0

td(off)

Ω

Fall Time

–––

30

50

RD = 10Ω

tf

ƒ

Between lead,6mm(0.25in.)

from package and center

of die contact

Ciss

Input Capacitance

––– 290 –––

VGS = 0V

Coss

Output Capacitance

––– 210 –––

pF

VDS = -15V

Crss

Reverse Transfer Capacitance

–––

67

–––

ƒ = 1.0MHz

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral r

ISM

everse

(Body Diode) 

p-n junction diode.

VSD

Diode Forward Voltage

––– ––– -1.2

V

TJ = 25°C, IS = -1.25A, VGS = 0V ƒ

Reverse Recovery Time

–––

69

100

ns

TJ = 25°C, IF

trr

= -1.25A

Reverse RecoveryCharge

–––

90

140

nC

di/dt = 100A/µs

Qrr

ƒ

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

––– ––– -9.2

––– ––– -2.0

I

I

A

GSS

DSS

Drain-to-Source Leakage Current

LS

L

Internal Source Inductance

––– 6.0

–––

D

Internal Drain Inductance

––– 4.0

–––

nH

ns

nA

µA

Ω

RDS(ON)

Static Drain-to-Source On-Resistance

S

D

G

S

D

G

m

-30V Dual P-Channel MOSFET

IRF7104

Rev:2023A2

2