PUMH1 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1999 May 20

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped double transistor

PUMH1

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector cut-off current

IE = 0; VCB =50V

−−

100

ICEO

collector cut-off current

IB = 0; VCE =30V

−−

µA

IB = 0; VCE =30V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

180

µA

hFE

DC current gain

IC = 5 mA; VCE =5V

−−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−−

150

Vi(off)

input-off voltage

IC = 100 µA; VCE =5V

−

1.1

0.8

Vi(on)

input-on voltage

IC = 5 mA; VCE = 200 mV

2.5

1.7

−

input resistor

15.4

28.6

Ω

resistor ratio

0.8

1.2

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−−

2.5

-------

Fig.3

DC current gain as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

MGM916

10−1

110

102

IC (mA)

hFE

103

102

(1)

(2)

(3)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

(2)

(3)

(1)

10−1

10−2

MGM915

10−1

110

102

IC (mA)

VCEsat

(V)

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