PUMH2 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1999 Aug 03

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped double transistor

PUMH2

THERMAL CHARACTERISTICS

Note

1. Refer to SC-88 standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector cut-off current

IE = 0; VCB =50V

−−

100

ICEO

collector cut-off current

IB = 0; VCE =30V

−−

µA

IB = 0; VCE = 30 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

µA

hFE

DC current gain

IC = 5 mA; VCE =5V

−−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−−

150

Vi(off)

input-off voltage

IC = 100 µA; VCE =5V

−

1.2

0.8

Vi(on)

input-on voltage

IC = 2 mA; VCE = 0.3 V

1.6

−

input resistor

Ω

resistor ratio

0.8

1.2

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−−

2.5

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