PUMZ1 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 14

Philips Semiconductors

Preliminary speciﬁcation

NPN/PNP general purpose transistors

PUMZ1

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per device

Rth j-a

thermal resistance from junction to ambient

note 1

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO

collector cut-off current

IE = 0; VCB =30V

−

100

IE = 0; VCB =30V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−

100

hFE

DC current gain

IC = 1 mA; VCE = 6 V

120

−

VCEsat

collector-emitter saturation voltage

IC = 50 mA; IB = 5 mA; note 1

−

200

collector capacitance

IE =ie = 0; VCB = 12 V; f = 1 MHz

TR1

−

1.5

TR2

−

2.2

transition frequency

IC = 2 mA; VCE = 12 V; f = 100 MHz 100

−

MHz

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