PXTA14 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 14

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistor

PXTA14

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for the SOT89 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to solder point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−

100

ICES

collector cut-off current

VBE = 0; VCE =30V

−

100

IEBO

emitter cut-off current

IC = 0; VEB =10V

−

100

hFE

DC current gain

IC = 10 mA; VCE = 5 V; (see Fig.2)

10000

−

IC = 100 mA; VCE = 5 V; (see Fig.2)

20000

−

VCEsat

collector-emitter saturation voltage

IC = 100 mA; IB = 0.1 mA

−

1.5

VBEsat

base-emitter saturation voltage

IC = 100 mA; IB = 0.1 mA

−

1.5

VBEon

base-emitter on-state voltage

IC = 100 mA; VCE =5V

−

transition frequency

IC = 30 mA; VCE = 5 V; f = 100 MHz

125

−

MHz

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