2SB772D

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in output stage of 1W audio amplifier,

voltage regulator, DC-DC converter and relay driver.

Pinning

1 = Emitter

2 = Collector

3 = Base

TO-126ML

Dimensions in inches and (millimeters)

.090

(2.28)

.123(3.12)

.113(2.87)

.084(2.14)

.074(1.88)

.033(0.84)

.027(0.68)

.163(4.12)

.153(3.87)

.044(1.12)

.034(0.87)

.060(1.52)

.050(1.27)

.084(2.12)

.074(1.87)

.591(15.0)

.551(14.0)

.300(7.62)

.290(7.37)

.148(3.75)

.138(3.50)

.056(1.42)

.046(1.17)

.180

(4.56)

Typ

.146(3.70)

.136(3.44)

.027(0.69)

.017(0.43)

Typ

1 2 3

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

-40

V

Collector-Emitter Voltage

-30

V

Emitter-Base Voltage

-5

V

Collector Current(DC)

-3

A

Collector Current(Pulse)

-7

A

Base Current(DC)

-0.6

A

10

W

1

W

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

-40

-

-

V

µA

Collector-Emitter Breakdown Voltage

-30

-

-

V

Emitter-Base Breakdown Volatge

-5

-

-

V

µA

Collector Cutoff Current

-

-

-1

µA

Emitter Cutoff Current

-

-

-1

µA

-

-0.3

-0.5

V

-

-1

-2

V

30

-

-

-

100

200

400

-

Transition Frequency

-

80

-

MHz

Output Capacitance

-

55

-

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Rank

Q

P

E

Range

100~200

160~320

200~400