DC9014

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in pre-amplifier of low level and

low noise.

Pinning

1 = Emitter

2 = Base

3 = Collector

TO-92

.022(0.56)

.014(0.36)

.050

(1.27)

.148(3.76)

.132(3.36)

Typ

.190(4.83)

.170(4.33)

.100

(2.54)

Typ

.050

(1.27)

Typ

.022(0.56)

.014(0.36)

.190(4.83)

.170(4.33)

.500

(12.70)

Min

3 2 1

Dimensions in inches and (millimeters)

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

50

V

Collector-Emitter Voltage

45

V

Emitter-Base Voltage

5

V

Collector Current

100

mA

Total Power Dissipation

450

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

50

-

-

V

Collector-Emitter Breakdown Voltage

45

-

-

V

Emitter-Base Breakdown Volatge

5

-

-

V

Collector Cutoff Current

-

-

50

nA

Emitter Cutoff Current

-

-

50

nA

-

0.14

0.3

V

-

0.84

1

V

Base-Emitter On Voltage

0.58

0.63

0.7

V

60

280

1000

-

Transition Frequency

150

270

-

MHz

Output Capacitance

-

2.2

3.5

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Rank

A

B

C

D

Range

60~150

100~300

200~600

400~1000