BAP63-01 datasheet(3/7 Pages) PHILIPS

3 / 7 page

2001 Nov 01

Philips Semiconductors

Preliminary specification

Silicon PIN diode

BAP63-01

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Note

Guaranteed on AQL basis: inspection level S4, AQL 1.0.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

IF =50 mA

0.95

1.1

reverse leakage current

VR =35 V

−

diode capacitance

VR = 0; f = 1 MHz

0.35

−

VR = 1 V; f = 1 MHz

0.30

−

VR = 20 V; f = 1 MHz

0.24

0.32

diode forward resistance

IF = 0.5 mA; f = 100 MHz; note 1

2.5

3.5

Ω

IF = 1 mA; f = 100 MHz; note 1

1.98

3.0

Ω

IF = 10 mA; f = 100 MHz; note 1

1.2

1.8

Ω

IF = 100 mA; f = 100 MHz; note 1

0.9

1.5

Ω

21|

isolation

VR = 0; f = 900 MHz

14.9

−

VR = 0; f = 1800 MHz

9.7

−

VR = 0; f = 2450 MHz

7.8

−

21|

insertion loss

IF = 0.5 mA; f = 900 MHz

0.22

−

IF = 0.5 mA; f = 1800 MHz

0.23

−

IF = 0.5 mA; f = 2450 MHz

0.25

−

21|

insertion loss

IF = 1 mA; f = 900 MHz

0.19

−

IF = 1 mA; f = 1800 MHz

0.21

−

IF = 1 mA; f = 2450 MHz

0.22

−

21|

insertion loss

IF = 10 mA; f = 900 MHz

0.15

−

IF = 10 mA; f = 1800 MHz

0.17

−

IF = 10 mA; f = 2450 MHz

0.19

−

21|

insertion loss

IF = 100 mA; f = 900 MHz

0.12

−

IF = 100 mA; f = 1800 MHz

0.15

−

IF = 100 mA; f = 2450 MHz

0.17

−

charge carrier life time

when switched from IF =10 mA to

IR =6mA; RL = 100 Ω;

measured at IR =3mA

0.3

−µs

series inductance

0.6

−

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

190

K/W

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