LB124E

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Pinning

1 = Base

2 = Collector

3 = Emitter

Description

Designed for high voltage, high speed switching

circuits, and amplifier applications.

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

600

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

8

V

Collector Current(DC)

2

A

Collector Current(Pluse)

4

A

35

W

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

TO-220AB

Dimensions in inches and (millimeters)

.625(15.87)

.570(14.48)

.562(14.27)

.500(12.70)

.055(1.39)

.045(1.15)

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

.295(7.49)

.220(5.58)

.350(8.90)

.330(8.38)

.640

(16.25)

Typ

.055(1.40)

.045(1.14)

.037(0.95)

.030(0.75)

.100

(2.54)

Typ

.024(0.60)

.014(0.35)

Φ.151

Φ(3.83)

Typ

1 2 3

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

600

-

-

V

Collector-Emitter Breakdown Voltage

400

-

-

V

Emitter-Base Breakdown Volatge

8

-

-

V

Collector Cutoff Current

-

-

10

µA

Emitter Cutoff Current

-

-

10

µA

-

-

0.3

V

-

-

0.8

V

-

-

0.9

V

-

-

1.2

V

10

-

40

-

10

-

-

-

6

-

-

-

Transition Frequency

15

-

-

MHz

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Rank

B1

B2

B3

B4

B5

B6

Range

10~17

13~22

18~27

23~32

28~37

33~40