S1G datasheet(3/12 Pages) PHILIPS

3 / 12 page

2000 Feb 14

Philips Semiconductors

Product speciﬁcation

SMA controlled avalanche rectiﬁers

S1 series

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Notes

1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.

2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper

≥40 µm. For more

information please refer to the

‘General Part of associated Handbook’.

VRMS

root mean square voltage

S1A

−

S1B

−

S1D

−

140

S1G

−

280

S1J

−

420

S1K

−

560

S1M

−

700

IF(AV)

average forward current

averaged over any 20 ms period;

Ttp = 110 °C; see Fig.2

−

IFSM

non-repetitive peak forward current

t = 8.3 ms half sine wave;

Tj =25 °C prior to surge;

VR =VRRMmax

S1A to S1J

−

S1K and S1M

−

Tstg

storage temperature

−65

+175

°C

junction temperature

See Fig.3

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

IF = 1 A; see Fig.4

−

1.1

reverse current

VR =VRRMmax; see Fig.5

S1A to S1J

−

µA

S1K and S1M

−

µA

VR =VRRMmax; Tj = 165 °C; see Fig.5

−

µA

trr

reverse recovery time

when switched from IF = 0.5 A to IR =1A;

measured at IR = 0.25 A; see Fig.9

−µs

diode capacitance

VR = 4 V; f = 1 MHz; see Fig.6

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point; see Fig.7

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

note 2

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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