MID112

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Pinning

1 = Base

2 = Collector

3 = Emitter

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

100

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

5

V

Collector Current

2

A

20

W

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Voltage

100

-

-

V

Collector-Emitter Breakdown Voltage

100

-

-

V

Collector Cutoff Current

-

-

10

µA

-

-

20

µA

Emitter Cutoff Current

-

-

2

mA

-

-

2.5

V

-

-

2.8

V

500

-

-

-

1K

-

12K

-

200

-

-

-

Output Capacitance

-

-

100

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

TO-251

Dimensions in inches and (millimeters)

.284(7.20)

.268(6.80)

.217(5.50)

.205(5.20)

.268(6.80)

.252(6.40)

.256

(6.50)

Min

.035

(0.90)

Max

.032

(0.80)

Max

.181

(4.60)

Typ

.095(2.40)

.087(2.20)

.059(1.50)

.035(0.90)

.024(0.60)

.018(0.45)

.022(0.55)

.018(0.45)

.063(1.60)

.055(1.40)

1

2

3

2

Description

Designed for general purpose power and switching

such as output or driver stages in applications such

as switching regulators, converters, and amplifiers.