IRF8313 datasheet(1/6 Pages) EVVOSEMI

Part #	IRF8313

Description	30V 2N-Channel Enhancement Mode MOSFET

PDF	6 Pages

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Manufacturer	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Direct Link	https://www.evvosemi.com

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Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

±

Gate-Source Voltage

20

V

Continuous Drain Current, VGS @ 10V

ID@TC=25℃

1

9

A

Continuous Drain Current, VGS @ 10V

ID@TC=100℃

1

8.2

A

Continuous Drain Current, VGS @ 10V

ID@TA=25℃

1

6.5

A

Continuous Drain Current, VGS @ 10V

ID@TA=70℃

1

5.6

A

Pulsed Drain Current

IDM

2

30

A

Single Pulse Avalanche Energy

EAS

3

15

mJ

IAS

Avalanche Current

22

A

Total Power Dissipation

PD@TC=25℃

4

1.6

W

Total Power Dissipation

PD@TA=70℃

4

1.0

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Thermal Resistance Junction-Ambient

RθJA

1

75

℃

/W

Thermal Resistance Junction-Case

RθJC

1

4.8

℃

/W

RDS(ON)

General Description

The

is the highest performance trench

<

mΩ @ VGS=10 V

RDS(ON) < 18mΩ @ VGS=4.5V

Application

Battery protection

Load switch

Uninterruptible power supply

N-ch MOSFETs with extreme high cell density,

which provide excellent RDSON and gate charge

for most of the small power switching and

load switch applications. The meet the RoHS and

Product requirement with full function reliability approved.

General Features

VDS = 30V ID = 9A

13

IRF8313

30V 2N-Channel Enhancement Mode MOSFET

D1

S1

G1

S2

D1

D2

G2

8

1

2

3

4

5

6

7

SOP-8

Rev:2023A2

1

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IRF8313 Datasheet(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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