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IRF9540 Datasheet(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRF9540 Datasheet(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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2 / 6 page ![]() Thermal Characteristics: Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.15 ℃ /W RƟJA Thermal Resistance Junction-Ambient 62 ℃ /W Electrical Characteristics:(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=-250μA -100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-100V --- --- -50 μ A IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ± 100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -1.2 -1.7 -2.5 V RDS(ON) Static Drain-Source On-Resistance VGS=-10V,ID=-10A --- 78 90 mΩ VGS=-4.5V,ID=-8A --- 86 110 Dynamic Characteristics Ciss Input Capacitance VDS=-20V, VGS=0V, f=1MHz --- 3020 --- pF Coss Output Capacitance --- 120 --- Crss Reverse Transfer Capacitance --- 73 --- Switching Characteristics td(on) Turn-On Delay Time2,3 VDD=-50V, ID=-10A, VGS=-10V, RG=3.3Ω --- 11 --- ns tr Rise Time2,3 --- 27 --- ns td(off) Turn-Off Delay Time2,3 --- 78 --- ns tf Fall Time2,3 --- 53 --- ns Qg Total Gate Charge2,3 VGS=-10V, VDS=-50V, --- 44 --- nC P-Channel MOSFET IRF9540 Rev:2023A2 2 |
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