BAS116H datasheet(4/9 Pages) PHILIPS

4 / 9 page

9397 750 14881

Product data sheet

Rev. 01 — 11 April 2005

4 of 9

Philips Semiconductors

BAS116H

75 V, low leakage diode in small SOD123F package

(1) Tamb = 150 °C; typical values

(2) Tamb =25 °C; typical values

(3) Tamb =25 °C; maximum values

Based on square wave currents

(1) Tj =25 °C; prior to surge

Fig 1.

Forward current as a function of forward

voltage

Fig 2.

Non-repetitive peak forward current as a

function of pulse duration

VR = 75 V

(1) Maximum values

(2) Typical values

Tamb =25 °C; f = 1 MHz

Fig 3.

Reverse current as a function of junction

temperature

Fig 4.

Diode capacitance as a function of reverse

voltage; typical values

mlb752

300

100

200

(mA)

1.6

0.8

1.2

0.4

VF (V)

(1)

(2)

(3)

mbg704

102

IFSM

(A)

10−1

tp (µs)

1104

103

102

150

200

mlb754

100

10−1

10−2

10−3

(nA)

Tj (°C)

(1)

(2)

mbg526

010

VR (V)

(pF)

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