BAT54CM datasheet(3/7 Pages) PHILIPS

3 / 7 page

2003 Nov 11

Philips Semiconductors

Product speciﬁcation

Schottky barrier double diode

BAT54CM

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Refer to SOT883 standard mounting conditions (footprint); FR4 with 60

µm copper strip line.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60

µm copper strip line.

Soldering

Reflow soldering is the only recommended soldering method.

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulsed test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

continuous forward current

−

200

IFRM

repetitive peak forward current

tp ≤ 1s; δ≤ 0.5

−

300

IFSM

non-repetitive peak forward current

tp <10ms

−

600

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Ptot

total power dissipation (per package)

Tamb ≤ 25 °C; note 1

−

250

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to

ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

forward voltage

see Fig.2;

IF = 0.1 mA

240

IF = 1 mA

320

IF = 10 mA

400

IF = 30 mA

500

IF = 100 mA

800

continuous reverse current

VR = 25 V; note 1; see Fig.3

µA

diode capacitance

f = 1 MHz; VR = 1 V; see Fig.4

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