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BB145C Datasheet(PDF) 2 Page - NXP Semiconductors |
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BB145C Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 2001 Dec 11 2 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB145C FEATURES • Ultra small plastic SMD package • Very low capacitance spread • High capacitance ratio • C1 to C4 ratio: min. 2.39, max. 2.53. APPLICATIONS Voltage Controlled Oscillators (VCO). DESCRIPTION The BB145C is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 ultra small plastic SMD package. MARKING PINNING TYPE NUMBER MARKING CODE BB145C K3 PIN DESCRIPTION 1 cathode 2 anode handbook, 2 columns 12 MBK441 Fig.1 Simplified outline (SOD523) and symbol. Cathode side indicated by a bar. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). CHARACTERISTICS Tj =25 °C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 10 V VRM peak reverse voltage in series with a 10 k Ω resistor − 12 V IF continuous forward current − 20 mA Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +150 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IR reverse current VR = 15 V; see Fig.3 − 3nA VR = 15 V; Tj =85 °C − 30 nA rs diode series resistance VR = 1 V; f = 470 MHz − 0.6 Ω Cd diode capacitance VR = 1 V; f = 1 MHz 6.4 7.2 pF VR = 4 V; f = 1 MHz 2.55 2.85 pF capacitance ratio f = 1 MHz 2.39 2.53 C d1V () C d4V () ---------------- |
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