2004 Nov 10

2

Philips Semiconductors

Product specification

PNP high-voltage transistors

BF421L; BF423L

FEATURES

• Low current (max. 50 mA)

• High voltage (max. 300 V)

• Available with a higher power rating (830 mW) under

type number: BF423.

APPLICATIONS

• Primarily intended for telephony applications.

DESCRIPTION

PNP transistor in a TO-92; SOT54 plastic package.

NPN complement: BF422L.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

Fig.1

Simplified outline (TO-92; SOT54) and

symbol.

3

2

MAM285

2

1

3

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BF421L

SC-43A

plastic single-ended leaded (through hole) package; 3 leads

SOT54

BF423L

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BF421L

−−300

V

BF423L

−−250

V

collector-emitter voltage

open base

BF421L

−−300

V

BF423L

−−250

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−50

mA

peak collector current

−−100

mA

peak base current

−−100

mA

total power dissipation

−

625

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

ambient temperature

−65

+150

°C