2004 Feb 04

2

Philips Semiconductors

Product specification

High-speed double diode

BAV70T

FEATURES

• Very small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage: max. 100V

• Repetitive peak reverse voltage: max. 100 V

• Repetitive peak forward current: max. 500 mA.

APPLICATIONS

• High-speed switching in e.g. surface mounted circuits.

DESCRIPTION

Two high-speed switching diodes in a common cathode

configuration, fabricated in planar technology, in a very

small rectangular SMD SOT416 (SC-75) package.

PINNING

PIN

DESCRIPTION

1

anode 1

2

anode 2

3

common cathode

Fig.1

Simplified outline (SOT416; SC-75) and

symbol.

Marking code: A4.

handbook, halfpage

12

3

MAM368

3

12

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BAV70T

−

plastic surface mounted package; 3 leads

SOT416

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode (unless otherwise specified)

repetitive peak reverse voltage

−

100

V

continuous reverse voltage

−

100

V

continuous forward current

single diode loaded

−

150

mA

both diodes loaded

−

75

mA

repetitive peak forward current

−

500

mA

non-repetitive peak forward

current

surge; see Fig.4

t=1

µs

−

4A

t=1ms

−

1A

t=1s

−

0.5

A

total power dissipation

−

170

mW

storage temperature

−65

+150

°C

junction temperature

−

+150

°C