Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SFF130 __ __

__ = Not Screen

TX = TX Level

TXV = TXV Level

S = S Level

│

│

│

│

│

│

│

└

Package

/5= TO-5

TO-5

SFF130/5

8 AMP / 100 Volts

0.18

Ω

N-Channel Power MOSFET

Features:

• Rugged Construction with Poly Silicon Gate

• Excellent High Temperature Stability

• Very Fast Switching Speed

• Fast Recovery and Superior dV/dt Performance

• Increased Reverse Energy Capability

• Low Input and Transfer Capacitance for Easy Paralleling

• Hermetically Sealed Package

• Available in both hot case and isolated versions

• Ideal for low power applications

• Replacement for IRFF130 Types

Symbol

Value

Units

Drain – Source Voltage

100

Volts

Gate – Source Voltage

±20

Volts

Continuous Collector Current

8

5

Amps

Power Dissipation

25

19

Watts

Operating & Storage Temperature

Top & Tstg

-55 to +150

ºC

Thermal Resistance

Junction to Case

5

ºC/W

Single Pulse Avalanche Energy

75

mJ

TO-5 Case Outline:

NOTES:

1/ For Ordering Information, Price, Operating

Curves, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Unless Otherwise Specified, All Maximum

Ratings and Electrical Characteristics @25ºC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00019D

DOC