Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFF450

__ __ __

│

│

│

│

│

│

│

│

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│

TX = TX Level

TXV = TXV Level

S = S Level

│

│

│

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__ = Straight Leads

DB = Down Bend

UB = Up Bend

Z = TO-254Z

SFF450M

SFF450Z

13 AMP / 500 Volts

0.4

Ω

N-Channel POWER MOSFET

Features:

• Rugged Construction with Polysilicon Gate Cell

• Excellent High Temperature Stability

• Very Fast Switching Speed

• Fast Recovery and Superior dV/dt Performance

• Increased Reverse Energy Capability

• Low Input and Transfer Capacitance for Easy Paralleling

• Ceramic Seals Available for Improved Hermeticity

• Hermetically Sealed Surface Mount Power Package

• TX, TXV, Space Level Screening Available

• Replacement for IRFM450 Types

Maximum Ratings

Symbol

Value

Units

Drain – Source Voltage

500

Volts

Gate – Source Voltage

±20

Volts

Continuous Collector Current

13

Amps

Operating & Storage Temperature

Top & Tstg

-55 to +150

ºC

Maximum Thermal Resistance

Junction to Case

1

ºC/W

Total Device Dissipation

125

95

W

TO-254 (M)

TO-254Z (Z)

For Pin Out Configuration and Optional Lead Bend, Se Page 3.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00097E

DOC