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SA572N Datasheet(PDF) 3 Page - NXP Semiconductors |
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SA572N Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page ![]() Philips Semiconductors Product specification SA572 Programmable analog compandor 1998 Nov 03 3 BLOCK DIAGRAM (7,9) (6,10) (3,13) (16) (8) (4,12) (2,14) (1,15) (5,11) GAIN CELL RECTIFIER P.S. 6.8k 10k BUFFER 10k 270 500 R1 Ω Ω ∆G – + – + SR00695 Figure 2. Block Diagram DC ELECTRICAL CHARACTERISTICS Standard test conditions (unless otherwise noted) VCC=15V, TA=25°C; Expandor mode (see Test Circuit). Input signals at unity gain level (0dB) = 100mVRMS at 1kHz; V1 = V2; R2 = 3.3kΩ; R3 = 17.3kΩ. SYMBOL PARAMETER TEST CONDITIONS SA572 UNIT SYMBOL PARAMETER TEST CONDITIONS Min Typ Max UNIT VCC Supply voltage 6 22 VDC ICC Supply current No signal 6.3 mA VR Internal voltage reference 2.3 2.5 2.7 VDC THD Total harmonic distortion (untrimmed) 1kHz CA=1.0µF 0.2 1.0 % THD Total harmonic distortion (trimmed) 1kHz CR=10µF 0.05 % THD Total harmonic distortion (trimmed) 100Hz 0.25 % No signal output noise Input to V1 and V2 grounded (20–20kHz) 6 25 µV DC level shift (untrimmed) Input change from no signal to 100mVRMS ±20 ±50 mV Unity gain level –1.5 0 +1.5 dB Large-signal distortion V1=V2=400mV 0.7 3 % Tracking error Rectifier input (measured relative to value at unity i) [V V ( it i )]dB V dB V2=+6dB V1=0dB ±0.2 dB gain)= [VO–VO (unity gain)]dB –V2dB V2=–30dB V1=0dB ±0.5 –2.5, +1.6 dB Channel crosstalk 200mVRMS into channel A, measured output on channel B 60 dB PSRR Power supply rejection ratio 120Hz 70 dB |
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