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RM110N90DF Datasheet(PDF) 2 Page - Rectron Semiconductor

Part # RM110N90DF
Description  N-Channel Trench MOSFET
PDF  5 Pages
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Manufacturer  RECTRON [Rectron Semiconductor]
Direct Link  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

RM110N90DF Datasheet(HTML) 2 Page - Rectron Semiconductor

  RM110N90DF Datasheet HTML 1Page - Rectron Semiconductor RM110N90DF Datasheet HTML 2Page - Rectron Semiconductor RM110N90DF Datasheet HTML 3Page - Rectron Semiconductor RM110N90DF Datasheet HTML 4Page - Rectron Semiconductor RM110N90DF Datasheet HTML 5Page - Rectron Semiconductor  
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Thermal Data
Typ.
Max
--
55.0
--
1.2
Electrical Characteristics(TJ=25℃,unless otherwise noted)
Min
Typ
Max
Unit
90
95
--
V
1.8
2.5
4
V
--
--
1
uA
--
--
±100
nA
IGSS
Symbol
Parameter
RθJc
Thermal Resistance-Junction to Case
℃
/W
Limit
Symbol
Parameter
RθJA
Thermal Resistance-Junction to Ambient
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VDS=90V, VGS=0V
VGS=±20V, VDS=0V
Gate Threshold Voltage
Gate -Source Leakage Current
IDSS
Drain-Source Leakage Current
VGS(th)
Static Characteristic
--
4.2
4.7
mΩ
--
3200
--
--
430
--
--
35
--
--
12
--
--
16
--
--
44
--
--
75
--
--
36
--
--
11
--
--
12
--
--
--
1.2
V
--
46
--
nS
182
C
Qg
Total Gate Charge
VGS=10V, ID=20A
td(off)
tf
Reverse diode Characteristic
Gate Charge Characteristic
nS
VSD
Forward on voltage
trr
Reverse Recovery Time
Qgs
Gate-Source Charge
VDS=30V, VGS=10V,
ID=30A
nC
Turn-off Delay Time
Q
RR
Ch
ISD=20A, VGS=0V
VR=0V,IF=20A, DIF/dt=100A/uS
Qgd
Ciss
Dynamic Characteristic
Turn-On Rise Time
VDS=40V,VGS=0V,f=1MHz
pF
Coss
RDS(ON)
td(on)
tr
Crss
Turn-Off Fall Time
Turn-On Delay Time
VDS=40V,VGS=10V ,
RG=2Ω, ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-Source On-Resistance
Gate-Drain Charge
--
182
--
nC
Qrr
Reverse Recovery Charge



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