SFF60P05Z datasheet(2/2 Pages) SSDI

2 / 2 page

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF60P05M

SFF60P05Z

Electrical Characteristics

Symbol

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

(VGS = 0V, ID = 250µA)

BVDSS

-50

––

Volts

Drain to Source On State Resistance

(VGS = -10V, ID = 60A)

RDS(on)

––

0.033

Ω

On State Drain Current

(VDS > ID(on) x RDS(on) Max, VGS = -10V)

RDS(on)

––

Amps

Gate Threshold Voltage

(VDS = VGS, ID = -250µA)

VGS(th)

-2.0

––

-4.0

Volts

Forward Transconductance

(VDS > ID(on) x RDS(on) Max, IDs = 60% of Rated ID)

gfs

––

Zero Gate Voltage Drain Current

(VDS = Max Rated Voltage, VGS = 0V)

(VDS = 80% Rated VDS, VGS = 0V)

TA = 25

TA = 125

IDSS

––

µA

Gate to Source Leakage (For

Gate to Source Leakage

At Rated VGS

IGSS

––

-100

100

µA

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = -10V

VDD = 40V

ID = 60A

RL = 0.67Ω

Qgs

Qgd

––

450

225

t(on)

td(on)

––

125

––

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

VDD = 50% Rated VDS

50% Rated ID

IG1 = IG2 = 2A

RL = 0.83Ω

VGS(clamp) = -10V/+0.6V

t(off)

td(off)

––

125

––

Diode Forward Voltage

IS = Rated ID

VGS = 0V

TJ = 25ºC

VSD

––

-1.9

Volts

Diode Reverse Recovery Time

IF = 10A

di/dt = 100A/usec

trr

Qrr

––

140

––

200

––

µC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = -25V

f = 1 MHz

Ciss

Coss

Crss

––

6000

1800

500

––

Available Part Numbers:

SFF60P05M, SFF60P05MUB, SFF60P05MDB;

SFF60P05Z, SFF60P05ZUB, SFF60P05ZDB

PIN ASSIGNMENT (Standard)

Package

Drain

Source

Gate

TO-254 (M)

Pin 1

Pin 2

Pin 3

TO-254Z (Z)

Pin 1

Pin 2

Pin 3

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