Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

TO-254 and TO-254Z

note 1: Drain Current is package limited

SFF35N20M

SFF35N20Z

55 AMP (note 1) /200 Volts

35 mO

N-Channel Trench Gate

MOSFET

Features:

•

TRENCH GATE technology

•

Lowest ON-resistance in the industry

•

UIS rated

•

Hermetically Sealed, Isolated Power Package

•

Low Total Gate Charge

•

Fast Switching

•

TX, TXV, S-Level screening available

•

•

Enhanced replacement for IRHM250 types

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

200

V

Gate – Source Voltage

±20

V

Max. Continuous Drain Current

(junction temperature limited)

85

12

A

Max. Continuous Drain Current (package limited)

55

A

Max. Avalanche current

@ L= 0.1 mH

35

A

Repetitive Avalanche Energy

@ L= 0.1 mH

60

mJ

Total Power Dissipation

210

W

Operating & Storage Temperature

-55 to +175

ºC

Maximum Thermal Resistance

(Junction to Case)

0.7

(typ 0.55)

ºC/W

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0018A

DOC

PIN 3

PIN 2

PIN 1

PIN 1

PIN 3

PIN 2

TO-254Z(Z)

TO-254 (M)