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ISF1212 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISF1212
Description  N-Channel MOSFET Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISF1212 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISF1212 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISF1212 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISF1212 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISF1212
eq IXFK150N30X3
N-Channel MOSFET Transistor
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V; ID =1mA
300
-
-
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID =4mA
2.5
-
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=75A
-
-
8.3
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
-
-
±100
nA
IDSS
Drain-Source Leakage Current
VDS=300V; VGS= 0V
-
-
25
μ
A
gfs
Forward Transconductance
VDS = 10V, ID = 60A
70
-
-
S
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
-
8562
-
pF
Coss
Output Capacitance
-
476
-
Crss
Reverse Transfer Capacitance
-
12.6
-
Qg
Total Gate Charge
VDD = 300V,
ID = 32A,
VGS = 10V
-
124
-
nC
Qgs
Gate-Source Charge
-
50
-
Qgd
Gate-Drain Charge
-
34
-
td(on)
Turn-on Delay Time
VDD = 300V,
ID = 32A,
RG = 1.0Ω,
VGS = 10V
-
34
-
ns
tr
Turn-on Rise Time
-
19
-
td(off)
Turn-off Delay Time
-
56
-
tf
Turn-off Fall Time
-
11
-
Drain - Source Body Diode Characteristics
ISD
Continuous Source Current
Tc = 25 ºC
-
-
150
A
ISM
Pulsed Source Current
-
-
600
A
VSD
Diode Forward Voltage
IF=150A; VGS = 0V
-
-
1.4
V
trr
Reverse Recovery Time
VDD = 150V, IF =20A,
diF/dt = 100A /μs
-
138
-
ns
Qrr
Reverse Recovery Charge
-
760
-
uC



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