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RF2374 Datasheet(PDF) 2 Page - RF Micro Devices

Part # RF2374
Description  3V LOW NOISE AMPLIFIER
PDF  8 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF2374 Datasheet(HTML) 2 Page - RF Micro Devices

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RF2374
Rev A0 DS070705
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
V
DC
Input RF Level
+5 (see note)
dBm
Current Drain, ICC
32
mA
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
NOTE: Exceeding any one or a combination of the above maximum rating lim-
its may cause permanent damage. Input RF transients to +15dBm will not
harm the device. For sustained operation at inputs >+5dBm, a small dropping
resistor is recommended in series with the VCC in order to limit the current due
to self-biasing to <32mA.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Operating Range
TAMB=+25°C, VCC=3.0V
Frequency Range
800
4000
MHz
WLAN Low Noise Amplifier
Frequency
2450
MHz
HIGH GAIN MODE
Gain Select<0.8V, VREF=3V, T=+25°C
Gain
13.5
14.5
dB
Noise Figure
1.3
1.5
dB
Input IP3
+7
+9
dBm
IIP3 will improve if ICC is raised above 7mA.
IP1dB
0
dBm
Current Drain
7
mA
BYPASS MODE (Low Gain)
Gain Select>1.8V
Gain
-4.0
-3.0
-2.0
dB
Note: Bypass mode insertion loss will degrade
gradually as VCC goes below 2.7V.
Input IP3
+19
+21
dBm
Current Drain
2.0
3.0
mA
GPS Low Noise Amplifier
Frequency
1575
MHz
Gain
17.5
dB
ICC=7mA
Noise Figure
1.0
dB
Input IP3
+7.0
dBm
WiMAX Low Noise Amplifier
Frequency
3500
MHz
ICC=7mA
Gain
11.0
dB
At 3500MHz
Noise Figure
1.6
dB
At 3500MHz
Input IP3
+10.0
dBm
IIP3 will improve if ICC is raised above 7mA.
CDMA Low Noise Amplifier
HIGH GAIN MODE
Frequency
869
894
MHz
Gain
19
dB
Noise Figure
1.0
dB
Input IP3
+2.0
dBm
IIP3 will improve if ICC is raised above 7mA.
Current Drain
7
mA
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).



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