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RF5824 Datasheet(PDF) 1 Page - RF Micro Devices

Part # RF5824
Description  3.3V, DUAL-BAND WLAN POWER AMPLIFIER MODULE
PDF  2 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF5824 Datasheet(HTML) 1 Page - RF Micro Devices

  RF5824 Datasheet HTML 1Page - RF Micro Devices RF5824 Datasheet HTML 2Page - RF Micro Devices  
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8-1
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
n
NC
RFINLB
GND
GND
RFINHB
VREGHB
GND
VCC3HB
RFOUTHB
RFOUTHB
RFOUT/
VCC2LB
RFOUT/
VCC2LB
7
11
1
3
4
2
10
12
5
6
9
8
18
16
15
17
14
13
19
20
21
22
23
24
2
nd Stage
Bias
Input
Match
Interstage
Match
1
st Stage
Bias
Input
Match
Interstage
Match
Interstage
Match
Output
Match
1
st, 2nd, and 3rd
Stage Bias
Pdetect
Circuit_HB
Pdetect
Circuit_LB
RF5824
3.3V, DUAL-BAND WLAN
POWER AMPLIFIER MODULE
• IEEE802.11a/b/g and IEEE802.11n WLAN
Applications
• Single-Chip RF Power Amplifier Module
• 2.5GHz and 5GHz ISM Bands Applications
• Wireless LAN Systems
• Portable Battery-Powered Equipment
The RF5824 is a linear, medium-power, high-efficiency
dual-band power amplifier module designed specifically
for battery-operated WLAN applications such as PC
cards, mini-PCI and compact flash applications. It is also
designed to meet IEEE802.11a/b/g, IEEE802.11n, FCC,
and ETSI requirements for operation within the 2.4GHz to
2.5GHz and 4.90GHz to 5.85GHz bands. The device is
manufactured on an advanced InGaP GaAs Heterojunc-
tion Bipolar Transistor process, and has been designed
for use as the final RF amplifier in both the 2GHz and
5GHz WLAN and other spread-spectrum transmitters.
The
device
is
packaged
in
a
QFN,
24-pin,
4mmx4mmx0.9mm plastic package with back side
ground. The RF5824 operates from a single supply and
will be easily incorporated into WLAN and other designs
with minimal external components.
• 5GHz Integrated Output Match
• 11a Current 155mA Typical
• 11g Current 120mA Typical
• Gain 27dB Typical for 11a and 11g
• EVM 3.5% TYP for 11g and
3.5% TYP for 11a (@ POUT 11a/g=17dBm)
• Single Supply Voltage 2.8V to 4.0V
RF5824
3.3V, Dual-Band WLAN Power Amplifier Module
RF5824PCBA-41X Fully Assembled Evaluation Board
0
Rev A0 061002
4.00 ± 0.10
4.00
± 0.10
2.44
0.400
± 0.100
2.44
0.500 TYP
Shaded area indicates pin 1.
Dimensions in mm.
0.90
± 0.10
-C-
SEATING
PLANE
SCALE:
NONE
0.080 C
0.025
± 0.020
0.10
C
M
Package Style: QFN, 24-pin, 4mmx4mm
Preliminary


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