Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

SDR1

__ __ __

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

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K = 800V

G = 400V

M = 1000V

J = 600V

N = 1200V

SDR1D thru SDR1N

1.0 AMPS

200 ─ 1200 VOLTS

50 – 80 nsec ULTRA FAST RECTIFIER

FEATURES:

•

Ultra Fast Recovery:

50-80 ns Max @ 25

80-130 ns Max @ 100

•

Single Chip Construction

•

PIV to 1200 Volts

•

Low Reverse Leakage Current

•

Hermetically Sealed

•

For High Efficiency Applications

•

Metallurgically Bonded

•

TX, TXV, and S-Level Screening Available

•

Available in Surface Mount (SM) and Square Tab

Surface Mount (SMS) Versions (Ref. RU0003)

RATING

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse

Voltage

And

DC Blocking Voltage

SDR1D

SDR1G

SDR1J

SDR1K

SDR1M

SDR1N

200

400

600

800

1000

1200

Volts

Rectified Forward Forward Current

1

Amp

Peak Surge Current

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

25

Amps

Operating & Storage Temperature

-65 to +175

°

C

Thermal Resistance, Junction to Lead, L = 3/8”

35

°

C/W

NOTES:

1/ For Ordering Information, Price, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

Axial Leaded

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RU0005F

DOC