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IRF8010L Datasheet(PDF) 2 Page - International Rectifier |
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IRF8010L Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF8010S/IRF8010L 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 12 15 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 82 ––– ––– V Qg Total Gate Charge ––– 81 120 Qgs Gate-to-Source Charge ––– 22 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 26 ––– td(on) Turn-On Delay Time ––– 15 ––– tr Rise Time ––– 130 ––– td(off) Turn-Off Delay Time ––– 61 ––– ns tf Fall Time ––– 120 ––– Ciss Input Capacitance ––– 3830 ––– Coss Output Capacitance ––– 480 ––– Crss Reverse Transfer Capacitance ––– 59 ––– pF Coss Output Capacitance ––– 3830 ––– Coss Output Capacitance ––– 280 ––– Coss eff. Effective Output Capacitance ––– 530 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy di mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 80 (Body Diode) A ISM Pulsed Source Current ––– ––– 320 (Body Diode) Ãi VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 99 150 ns Qrr Reverse RecoveryCharge ––– 460 700 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 20V VGS = -20V Max. VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V e VGS = 10V f VDD = 50V ID = 80A RG = 39Ω TJ = 25°C, IS = 80A, VGS = 0V f TJ = 150°C, IF = 80A, VDD = 50V di/dt = 100A/µs f Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 45A f VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. Conditions 26 VGS = 10V f VGS = 0V VDS = 25V ƒ = 1.0MHz 310 45 Conditions VDS = 25V, ID = 45A ID = 80A VDS = 80V Typ. ––– ––– ––– |
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