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3DD204 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3DD204 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 3DD204 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) · DC Current Gain- : hFE= 50~200(Min.)@IC= 0.5A · Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC= 0.5A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for B&W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A PC Collector Power Dissipation@TC=75℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Similar Part No. - 3DD204 |
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Similar Description - 3DD204 |
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