IRHLNA797064, 2N7622U2

Pre-Irradiation

2

www.irf.com

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

-56*

ISM

Pulse Source Current (Body Diode)

À

—

—

-224

VSD

Diode Forward Voltage

—

—

-5.0

V

trr

Reverse Recovery Time

—

—

159

ns

Tj = 25°C, IF = -56A, di/dt ≤ -100A/µs

QRR Reverse Recovery Charge

—

—

430

nC

VDD ≤ -25V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-60

—

—

V

VGS = 0V, ID = -250µA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

-0.06

—

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.015

Ω

VGS = -4.5V, ID = -56A

Resistance

VGS(th)

Gate Threshold Voltage

-1.0

—

-2.0

V

VDS = VGS, ID = -250µA

∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient

—

4.1

—

mV/°C

gfs

Forward Transconductance

82

—

—

S

VDS = -15V, IDS = -56A Ã

IDSS

Zero Gate Voltage Drain Current

—

—

-1.0

VDS= -48V ,VGS=0V

—

—

-10

VDS = -48V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS = -10V

IGSS

Gate-to-Source Leakage Reverse

—

—

100

VGS = 10V

Qg

Total Gate Charge

—

—

190

VGS = -4.5V, ID = -56A

Qgs

Gate-to-Source Charge

—

—

53

nC

VDS = -30V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

56

Turn-On Delay Time

—

—

38

VDD = -30V, ID = -56A,

tr

Rise Time

—

—

265

VGS = -6.0V, RG = 2.35Ω

Turn-Off Delay Time

—

—

210

tf

Fall Time

—

—

70

LS + LD

Total Inductance

—

4.0

—

Ciss

Input Capacitance

—

10520

—

VGS = 0V, VDS = -25V

Coss

Output Capacitance

—

2780

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

310

—

nA

Ã

nH

ns

µA

Measured from the center of

drain pad to center of source pad

* Current is limited by package

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

—

—

0.5

RthJ-PCB

Junction-to-PC board

—

1.6

—

soldered to a 2” square copper-cladboard

°C/W

Rg

Gate Resistance

2.3

Ω

f = 1.0MHz, open drain