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S71PL129JC0 Datasheet(PDF) 136 Page - SPANSION

Part # S71PL129JC0
Description  Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory
PDF  153 Pages
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
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S71PL129JC0 Datasheet(HTML) 136 Page - SPANSION

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S71PL129JC0/S71PL129JB0/S71PL129JA0
S71PL129Jxx_00_A8 October 28, 2005
Advance
Info rmation
The first cycle reads from the most significant address (MSB).
The second and third cycle are to write back the data (RDa) read by first cycle. If the second or
third cycle is written into the different address, the program is cancelled, and the data written by
the second or third cycle is valid as a normal write operation.
The fourth and fifth cycles write to MSB. The data from the fourth and fifth cycles is “don’t care.”
If the fourth or fifth cycles are written into different address, the program is also cancelled but
write data might not be written as normal write operation.
The last cycle is to read from specific address key for mode selection.
Once this program sequence is performed from a Partial mode to the other Partial mode, the writ-
ten data stored in memory cell array can be lost. So, it should perform this program prior to
regular read/write operation if Partial mode is used.
Address Key
The address key has following format.
3rd
Write
3FFFFFh
RDa
4th
Write
3FFFFFh
Don’t Care (X)
5th
Write
3FFFFFh
X
6th
Read
Address Key
Read Data (RDb)
Mode
Address
32M
64M
A21
A20
A19
A18 - A0
Binary
Sleep (default)
Sleep (default)
1
1
1
1
3FFFFFh
4M Partial
N/A
1
1
0
1
37FFFFh
8M Partial
8M Partial
1
0
1
1
2FFFFFh
N/A
16M Partial
1
0
0
1
27FFFFh
Cycle #
Operation
Address
Data



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