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AH3713Q Datasheet(PDF) 3 Page - Diodes Incorporated |
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AH3713Q Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 19 page ![]() AH3713Q/AH3714Q/AH3715Q AH3716Q/AH3717Q Document number: DS46067 Rev. 1 - 2 3 of 19 www.diodes.com October 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. AH3713Q/AH3714Q/AH3715Q AH3716Q/AH3717Q Absolute Maximum Ratings (Notes 5 & 6) (@TA = +25°C, unless otherwise specified.) Symbol Characteristic Value Unit VDD Supply Voltage (Note 6) 40 V VDDR Reverse Supply Voltage -18 V VOUT_MAX Output Pin Voltage (Note 6) 40 V IOUT Output Current Sink 60 mA IOUT_R Reverse Output Current -50 mA B Magnetic Flux Density Unlimited PD Package Power Dissipation SIP-3 (Bulk Pack) 550 mW SC59 and SOT23 (Type S) 230 TS Storage Temperature Range -65 to +165 °C TJ Maximum Junction Temperature +170 °C ESD HBM Electrostatic Discharge Withstand Capability —Human Body Model 8 kV ESD CDM Electrostatic Discharge Withstand Capability —Charged Device Model 1 kV Notes: 5. Stresses greater than those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings for extended periods can affect device reliability. 6. The absolute maximum VDD of 40V is a transient stress rating and is not meant as a functional operating condition. It is not recommended to operate the device at the absolute maximum-rated conditions for any period of time. Recommended Operating Conditions (@TA = -40°C to +150°C, unless otherwise specified.) Symbol Parameter Conditions Rating Unit VDD Supply Voltage Supply voltage, between VDD and GND pins 3.0 to 27 V TA Operating Temperature Range Operating ambient temperature range -40 to +150 °C Electrical Characteristics (Notes 7 & 8) (@TA = -40°C to +150°C, VDD = 3V to 27V, CIN = 0.1µF, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit VOUT_ON Output On Voltage IOUT = 20mA, B > BOP — 0.25 0.42 V IOUT_OFF Output Leakage Current VOUT = 27V, B < BRP, output off — <0.1 10 µA IDD Supply Current Output open, TA = +25 C — 2.8 3.8 mA Output open, TA = -40°C to +150°C — 2.8 4.8 mA IDD_R Reverse Battery Current VDD = -18V, TA = -40°C to +150°C — 0.001 2.3 mA tst Device Startup Time VDD ≥ 3V, B > BOP+10Gs or B < BRP - 10Gs (Note 7) — 13 — µs fC Chopping Frequency VDD ≥ 3V (Note 9) — 500 — kHz td The Time Delay from Magnetic Threshold Reached to the Start of the Output Rise or Fall B > 3 x BOPMAX, square wave magnetic field — 10. — µs tr Output Rising Time (External Pullup Resistor RL and Load Capacitance Dependent) RL = 1kΩ, CL = 20pF (Note 9) — 0.1 1 µs tf Output Falling Time (Internal Switch Resistance and Load Capacitance Dependent) RL = 1kΩ, CL = 20pF (Note 9) — 0.3 1 µs IOCL Output Current Limit Output on (Note 10) 30 — 60 mA VZ Zener Clamp Voltage IDD = 8mA, TA = +25°C, output off 36 — — V Notes: 7. When power is initially turned on, VDD must be within its correct operating range (3.0V to 27V) to guarantee the output sampling. The output state is valid after the startup time of 13µs typical from the operating voltage reaching 3V. 8. Typical values are defined at TA = +25C, VDD = 12V. Maximum and minimum values over the operating temperature range is not tested in production but guaranteed by design, process control and characterization 9. Guaranteed by design, process control, and characterization. Not tested in production. 10. The device limits the output current IOUT to current limit of IOCL. |
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