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SS2P2L Datasheet(PDF) 1 Page - Vishay Siliconix |
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SS2P2L Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() Vishay General Semiconductor SS2P2L & SS2P3L Document Number: 88916 Revision: 16-May-07 www.vishay.com 1 New Product Low VF High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, free- wheelling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-220AA (SMP) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes the cathode end DO-220AA (SMP) MAJOR RATINGS AND CHARACTERISTICS IF(AV) 2 A VRRM 20 V, 30 V IFSM 50 A EAS 11.25 mJ VF 0.45 V Tj max. 150 °C Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS2P2L SS2P3L UNIT Device marking code 22L 23L Maximum repetive peak reverse voltage VRRM 20 30 V Maximum average forward rectified current (see Fig. 1) IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 50 A Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, Tj = 25 °C EAS 11.25 mJ Voltage rate of change (rated VR) dv/dt 10000 V/us Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP MAX. UNIT Maximum instantaneous forward voltage (1) at IF = 2 A, Tj = 25 °C at IF = 2 A, Tj = 125 °C VF 0.45 0.38 0.50 0.45 V Maximum reverse current at rated VR (1) Tj = 25 °C Tj = 125 °C IR - 9.0 200 20 µA mA Typical junction capacitance at 4.0 V, 1 MHz CJ 130 pF |
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