DF2S10ASL

2

4. Electrical Characteristics (Unless otherwise specified, Ta = 25�)

VRWM: Working peak reverse

voltage

VZ: Zener voltage

VBR: Reverse breakdown voltage

ZZ: Dynamic impedance

IZ: Zener current

IBR: Reverse breakdown current

IR: Reverse current

VR: Reverse voltage

VC: Clamp voltage

IPP: Peak pulse current

RDYN: Dynamic resistance

IF: Forward current

VF: Forward voltage

Fig. 4.1

Definitions of Electrical Characteristics

Characteristics

Working peak reverse voltage

Zener voltage

(Reverse breakdown voltage)

Dynamic impedance

Reverse current

Clamp voltage

Dynamic resistance

Total capacitance

Symbol

VRWM

VZ

(VBR)

ZZ

IR

VC

RDYN

Ct

Note

(Note 1)

(Note 2)

(Note 2)

(Note 3)

Test Condition

�

IZ = 5 mA

(IBR = 5 mA)

IZ = 5 mA

(IBR = 5 mA)

VRWM = 8 V

IPP = 1 A

IPP = 2.5 A

ITLP = 16 A

ITLP = 30 A

�

VR = 0 V, f = 1 MHz

Min

�

9.4

�

�

�

�

�

�

�

�

Typ.

�

10.0

�

�

13.1

15.7

22.5

31

0.5

16

Max

8

10.6

30

0.5

�

24

�

�

�

�

Unit

V

V

Ω

µA

V

V

Ω

pF

Note 1: Based on IEC61000-4-5 8/20 µs pulse.

Note 2: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t = 30 ns to 60 ns,

extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 8 A to 16 A.

Note 3: Guaranteed by design.

2023-04-10

Rev.1.0

©2023

Toshiba Electronic Devices & Storage Corporation