AiT Semiconductor Inc.

AM12NS10H

www.ait-ic.com

MOSFET

100V, N-CHANNEL SGT MOSFET

REV1.1

- JAN 2023 RELEASED, APR 2024 UPDATED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

At Tc = 25°C, unless otherwise specified

VDSS, Drain-Source Voltage

100V

ID

Continuous Drain Current,

Silicon Limited

TO-220F

34.8A

TO-252, TO-251

PDFN8(5x6)

49A

TO-220, TO-263-2

55A

SOP8

11A

Continuous Drain Current,

Package Limited

TO-220F, TO-220,

TO-263-2, TO-252,

TO-251, PDFN8(5x6)

60A

SOP8

20A

Continuous Drain Current

@TC =100°C, Silicon Limited

TO-220F

22A

TO-252, TO-251

PDFN8(5x6)

31.5A

TO-220, TO-263-2

34.8A

SOP8

6.9A

IDM (1), Pulsed Drain Current

TO-220F

139.2A

TO-252, TO-251

PDFN8(5x6)

196A

TO-220，TO-263-2

220A

SOP8

44A

VGS, Gate-Source Voltage

±20V

EAS (2), Avalanche Energy

TO-220F, TO-220,

TO-263-2, SOP8

100mJ

TO-252, TO-251

PDFN8(5x6)

56.2mJ

PD

Power Dissipation

TO-220F

27.7W

TO-252, TO-251

PDFN8(5x6)

55.9W

TO-220, TO-263-2

69.4W

SOP8

2.7W

Derating Factor above 25°C

TO-220F

0.22W/℃

TO-252, TO-251

PDFN8(5x6)

0.447 W/℃

TO-220, TO-263-2

0.56 W/℃

SOP8

0.022 W/℃

TSTG, Storage Temperature Range

-55℃~150℃

TJ, Junction Temperature

150℃

TL, Maximum Temperature for Soldering

260℃

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

(1)：Repetitive Rating：Pulse width limited by maximum junction temperature.

(2)：TO-220F,TO-220,TO-263-2,SOP8 : L=0.5mH, Ias=20A, Start TJ =25℃

TO-252, TO-251, PDFN8(5x6): L=0.5mH, Ias=15A, Start TJ =25℃