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SST25VF032B Datasheet(PDF) 21 Page - Silicon Storage Technology, Inc |
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SST25VF032B Datasheet(HTML) 21 Page - Silicon Storage Technology, Inc |
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21 / 28 page ![]() Advance Information 32 Mbit SPI Serial Flash SST25VF032B 21 ©2006 Silicon Storage Technology, Inc. S71327-00-000 10/06 ELECTRICAL SPECIFICATIONS Absolute Maximum Stress Ratings Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability. Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA 1. Output shorted for no more than one second. No more than one output shorted at a time. OPERATING RANGE Range Ambient Temp VDD Commercial 0°C to +70°C 2.7-3.6V Industrial -40°C to +85°C 2.7-3.6V AC CONDITIONS OF TEST Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF See Figure 27 TABLE 8: DC Operating Characteristics (VDD = 2.7-3.6V) Symbol Parameter Limits Test Conditions Min Max Units IDDR Read Current 10 mA CE# = 0.1 VDD/0.9 VDD@25 MHz, SO = open IDDR2 Read Current 15 mA CE# = 0.1 VDD/0.9 VDD@50 MHz, SO = open IDDW Program and Erase Current 30 mA CE# = VDD ISB Standby Current 20 µA CE# = VDD, VIN = VDD or VSS ILI Input Leakage Current 1 µA VIN = GND to VDD, VDD = VDD Max ILO Output Leakage Current 1 µA VOUT = GND to VDD, VDD = VDD Max VIL Input Low Voltage 0.8 V VDD = VDD Min VIH Input High Voltage 0.7 VDD VVDD = VDD Max VOL Output Low Voltage 0.2 V IOL = 100 µA, VDD = VDD Min VOL2 Output Low Voltage 0.4 V IOL = 1.6 mA, VDD = VDD Min VOH Output High Voltage VDD-0.2 V IOH = -100 µA, VDD = VDD Min T8.0 1327 TABLE 9: Recommended System Power-up Timings Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. VDD Min to Read Operation 100 µs TPU-WRITE1 VDD Min to Write Operation 100 µs T9.0 1327 |
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