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UR4KB100-B Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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UR4KB100-B Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 5 page ![]() UR4KB60-B – UR4KB100-B Taiwan Semiconductor 2 Version: D2104 THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 9.3 °C/W Junction-to-ambient thermal resistance RӨJA 14.0 °C/W Junction-to-case thermal resistance RӨJC 8.2 °C/W ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage per diode (1) IF = 2A,TJ = 25°C VF - 1 V Reverse current @ rated VR per diode (2) TJ = 25°C IR - 10 µA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING UR4KBx-B D3K 25 / Tube Notes: 1. “x” defines voltage from 600V(UR4KB60-B) to 1000V(UR4KB100-B) |
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