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2SA2222B Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SA2222B
Description  Silicon PNP Power Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA2222B Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA2222B Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA2222B Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SA2222B Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Silicon PNP Power Transistor
2SA2222B
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -0.1mA, IE= 0
-50
--
--
V
V(BR)CEO
Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
-50
--
--
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -0.1mA; IC= 0
-6
--
--
V
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
--
--
-10
uA
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
--
--
-10
uA
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -6A; IB= -0.3A
--
--
-0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -6A; IB= -0.3A
--
--
-1.2
V
hFE
DC Current Gain
IC= -0.27A; VCE= -2V
150
--
450
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
--
120
--
pF
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -10V
--
240
--
MHz
TYPICAL CHARACTERISTICS (TJ= 25ºC, unless otherwise noted)
Figure 1. IC-VCE
VCE.Collector-Emitter Voltage（V）
IC. Collector Current (A)
Figure 2. hFE-IC



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