GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1M

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2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

1A

1B

1D

1G

1J

1K

1M

VRRM

Maximum Repetitive Reverse Voltage

50

100

200

400

600

800

1000

V

IF(AV)

Average Rectified Forward Current, @ TL = 125°C

1.0

A

IFSM

Non−repetitive Peak Forward Surge Current

8.3 ms Single Half−Sine−Wave

30

A

Tstg

Storage Temperature Range

−65 to +175

°C

TJ

Operating Junction Temperature

−65 to +175

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

PD

Power Dissipation

1.8

W

RqJA

Thermal Resistance, Junction to Ambient*

80

_C/W

RqJL

Thermal Resistance, Junction to Lead*

26

_C/W

*Device mounted on PCB with 0.2 x 0.2” (5.0 x 5.0 mm) copper pad areas.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol

Parameter

Device

Unit

1A

1B

1D

1G

1J

1K

1M

VF

Forward Voltage @ 1.0 A

1.0

1.2

V

trr

Reverse Recovery Time

IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A

2.0

ms

IR

Reverse Current @ Rated VR

TA = 25_C

TA = 125_C

5.0

50.0

mA

mA

CT

Total Capacitance

VR = 4.0 V, f = 1.0 MHz

15

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.