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ISC044N15NM6 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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ISC044N15NM6 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 13 page ![]() Datasheet 1 Revision 2.0 https://www.infineon.com 2024‑04‑23 MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit V 150 V R 4.4 mΩ I 156 A Q 163 nC Q 55 nC Q (500 A/μs) 137 nC PG‑TSON‑8 Type/Ordering Code Package Marking Related Links ISC044N15NM6 PG‑TSON‑8 04415N6 ‑ N‑channel, normal level • Very low on‑resistance R • DS(on) Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020 • DS DS(on),max D oss G rr Public ISC044N15NM6 Final datasheet 1 2 3 4 7 6 5 8 Drain Pin 5-8 Gate Pin 4 Source Pin 1-3 *1 *1: Internal body diode |
Similar Part No. - ISC044N15NM6 |
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Similar Description - ISC044N15NM6 |
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