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HUM3003 Datasheet(PDF) 1 Page - Microsemi Corporation |
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HUM3003 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page ![]() HUM3002/3003/3004 High Voltage, High Power Pin Diode PRODUCT PREVIEW/PRELIMINARY KEY FEA T URES Non-magnetic Package For MRI Application. High Power, High Voltage Package (4 kV -40 kW) Stable High Voltage Chip Passivation. High Current Rating. High Surge Current Rating. Low Rs, Low Loss, Low Distortion Design. DESCRIPTION These Microsemi PIN diodes are perfect for high power switching applications where high isolation, low loss, low distortion characteristics, and high power handling capability are critical. These PIN diodes utilize Microsemi’s SOGO passivation process for superior stable high voltage operation. The package is a modified DO-4 structure for ease of mount down with excellent thermal properties. No thin internal straps are used for electrical connections. A surge current of 150 amperes at half sine 8.3 ms is easily handled. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com DO-4 PIN DIODE APPLICA T ION S /BE NEFI TS MRI Applications. High Power Antenna Switching. Band Switching. Industrial Heating. Maximu m Rating s @ 25ºC (UNLESS OTHERWIS E SP ECIFI E D) TYPE Parameter S y m b o l HUM3002 HUM3003 HUM3004 Unit Reverse Voltage IR = 10µA VR 2,000 3,000 4,000 V Average Power Dissipation @ Stud =50°C IO 50 50 50 W RF Power Handling Capability(CW) @Zo = 50 OHms Rs = 0.1 OHM @ Stud =50°C PRF 40 40 40 kW Non-Repetitive Sinusoidal Surge Current (8.3 ms) IFSM 150 150 150 A Storage Temperature Range TSTG -55°C to +150°C -55°C to +150°C -55°C to +150°C °C Operating Temperature Range TOP -55°C to +125 -55°C to +125 -55°C to +125 °C Thermal resistance Junction-to Case RθJC 1.5 1.5 1.5 °C/W Parameter Symbol Conditions Min Typ. Max Units Diode Resistance RS F= 10 MHz, If = 250 mA 0.1 0.2 Ω Capacitance CT CT F= 1 MHz, 100 V 4.3 5.0 pF Reverse Current IR VR @ Rated Voltage 10 µA Carrier Lifetime τ If = 10 mA / 100 V 20 30 µs Parallel Resistance RP F= 1 MHz, 100 V 5 k Ω Forward Voltage Vf If = 0.5 A 0.75 V ELECTR ICAL CHARACTERISTIC S Microsemi |
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