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IF4510

Document Number: IF35114.R00

InterFET Corporation

April, 2020

IF4510

InterFET

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Technical

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Electrical Characteristics

Maximum Ratings (@ T

A

= 25°C, Unless otherwise specified)

Parameters

Value

Unit

VRGS Reverse Gate Source and Gate Drain Voltage

-40

V

IFG

Continuous Forward Gate Current

10

mA

PD

Continuous Device Power Dissipation

225

mW

P

Power Derating

1.8

mW/°C

TJ

Operating Junction Temperature

-55 to 125

°C

TSTG Storage Temperature

-65 to 200

°C

Static Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

Min

Typ

Max

Unit

V(BR)GSS

Gate to Source

Breakdown Voltage

VDS = 0V, IG = -1μA

-40

V

IGSS

Gate to Source

Reverse Current

VGS = -30V, VDS = 0V

-0.1

nA

VGS(OFF)

Gate to Source

Cutoff Voltage

VDS = 15V, ID = 0.5nA

-0.35

-1.5

V

IDSS

Drain to Source

Saturation Current

VGS = 0V, VDS = 15V

(Pulsed)

5

20

mA

Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)

Parameters

Conditions

Min

Typ

Max

Unit

GFS

Forward

Transconductance

VDS = 15V, ID = 5mA, f = 1kHz

15

50

mS

Ciss

Input Capacitance

VDS = 15V, VGS = 0V, f = 1MHz

35

pF

Crss

Reverse Transfer

Capacitance

VDS = 15V, VGS = 0V, f = 1MHz

8

pF

en

Equivalent Circuit

Input Noise Voltage

VDS = 4V, ID = 5mA, f = 1kHz

1.1

nV/√Hz